PART |
Description |
Maker |
HCS360 HCS360-ISN HCS360-SN HCS360-IP MICROCHIPTEC |
IC AC/DC CONV 15V 200MA SIP12 IC AC/DC CONV -12V 300MA SIP12 IC CONV AC/DC -12V 500MA SIP12 而Keeloq跳码编码 IC AC/DC CONV 24V 200MA SIP12 而Keeloq跳码编码
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Microchip Technology Inc. Microchip Technology, Inc.
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STK4161X STK4191 STK4191X STK4141X STK4151X STK420 |
2ch./1packge - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02% 2ch /1packge / - Power Supply Built-in Muting Circuit 25W/ch ~ 70W/ch THD=0.02% 2ch./1packge, - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02% 2ch./1packge-电源内置静噪电路25W/ch70W/ch。总谐波失真\u003d 0.02 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 10uF; Voltage: 450V; Case Size: 12.5x20 mm; Packaging: Bulk
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http:// SANYO[Sanyo Semicon Device] Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd.
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TA8260AH |
Max Power 40 W BTL 4CH Audio Power IC Max Power 40 W BTL 】 4CH Audio Power IC Max Power 40 W BTL x 4CH Audio Power IC RAC15-TA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 12V; Features: Compact AC-DC Power
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Toshiba Semiconductor Toshiba Corporation
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PBYR10100X |
RS232 TO CURRENT LOOP CONV DB25M-DB25F - EUROPE RS232 TO CURRENT LOOP CONV DB25M-DB25F - EUROPE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC RECTIFIER DIODES SCHOTTKY BARRIER
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NXP Semiconductors N.V. Philips Semiconductors
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STK4160MK2 STK4190MK2 STK4120MK2 STK4110MK2 STK414 |
2ch./1packge, - Power Supply 6W/ch. ~ 100W/ch. THD=0.4% 2ch./1packge-电源6W/ch100W/ch。总谐波失真\u003d 0.4 2ch./1packge / - Power Supply 6W/ch. ~ 100W/ch. THD=0.4% 2ch./1packge - Power Supply 6W/ch. ~ 100W/ch. THD=0.4%
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Sanyo Electric Co., Ltd. Electronic Theatre Controls, Inc. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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MSM7533V MSM7533H MSM7534 MSM7533H_MSM7533V_MSM753 |
MU-LAW, PCM CODEC, PDSO24 (MSM7533) 2ch Single Rail CODEC From old datasheet system 2ch single CODEC
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OKI ELECTRIC INDUSTRY CO LTD OKI[OKI electronic componets] OKI electronic components
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K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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CE-1003 |
IC CONV DC-DC SNGL OUT STEP DOWN 6 TO 16VIN T/R
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TDK Semiconductor
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HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
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